ChipFind - документация

Электронный компонент: KTA1659A

Скачать:  PDF   ZIP
2002. 7. 16
1/3
SEMICONDUCTOR
TECHNICAL DATA
KTA1659/A
EPITAXIAL PLANAR PNP TRANSISTOR
Revision No : 1
HIGH VOLTAGE APPLICATION.
FEATURES
High Transition Frequency : f
T
=100MHz(Typ.).
Complementary to KTC4370/A.
MAXIMUM RATING (Ta=25 )
DIM MILLIMETERS
1. BASE
2. COLLECTOR
3. EMITTER
TO-220IS
10.30 MAX
15.30 MAX
2.70 0.30
0.85 MAX
3.20 0.20
3.00 0.30
A
B
C
D
E
F
G
12.30 MAX
0.75 MAX
H
13.60 0.50
3.90 MAX
1.20
1.30
2.54
4.50 0.20
6.80
2.60 0.20
10
J
K
L
M
N
O
P
Q
R
F
O
Q
1
2
3
L
P
N
B
G
J
M
D
N
T
T
H
E
R
T
V
S
K
L
U
T
S
0.5
5
25
2.60 0.15
V
U
D
A
C
ELECTRICAL CHARACTERISTICS (Ta=25 )
Note : h
FE
Classification O:70~140, Y:120~240
CHARACTERISTIC
SYMBOL
RATING
UNIT
Collector-Base
Voltage
KTA1659
V
CBO
-160
V
KTA1659A
-180
Collector-Emitter
Voltage
KTA1659
V
CEO
-160
V
KTA1659A
-180
Emitter-Base Voltage
V
EBO
-5
V
Collector Current
I
C
-1.5
A
Base Current
I
B
-0.15
A
Collector Power Dissipation (Tc=25 )
P
C
20
W
Junction Temperature
T
j
150
Storage Temperature Range
T
stg
-55 150
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNIT
Collector Cut-off Current
I
CBO
V
CB
=-160V, I
E
=0
-
-
-1.0
A
Emitter Cut-off Current
I
EBO
V
EB
=-5V, I
C
=0
-
-
-1.0
A
Collector-Emitter
Breakdown Voltage
KTA1659
V
(BR)CEO
I
C
=-10mA, I
B
=0
-160
-
-
V
KTA1659A
-180
-
-
DC Current Gain
h
FE
(Note)
V
CE
=-5V, I
C
=-100mA
70
-
240
Collector-Emitter Saturation Voltage
V
CE(sat)
I
C
=-500mA, I
B
=-50mA
-
-
-1.5
V
Base-Emitter Voltage
V
BE
V
CE
=-5V, I
C
=-500mA
-
-
-1.0
V
Transition Frequency
f
T
V
CE
=-10V, I
C
=-100mA
-
100
-
MHz
Collector Output Capacitance
C
ob
V
CB
=-10V, I
E
=0, f=1MHz
-
30
-
pF
2002. 7. 16
2/3
Revision No : 1
KTA1659/A
I - V
C
CE
CE
COLLECTOR-EMITTER VOLTAGE V (V)
0
-4
-20
-2.0
C
0
COLLECTOR CURRENT I (mA)
-0.4
h - I
FE
C
C
COLLECTOR CURRENT I (mA)
-10
-3
FE
DC CURRENT GAIN h
COLLECTOR-EMITTER SATURATION
CE(sat)
-0.03
-300
-100
-10
COLLECTOR CURRENT I (mA)
C
C
CE(sat)
V - I
COLLECTOR CURRENT I (mA)
0
C
-0.2
0
BASE-EMITTER VOLTAGE V (V)
BE
BE
C
I - V
DC CURRENT GAIN h
FE
COLLECTOR CURRENT I (mA)
C
C
FE
h - I
-8
-12
-16
-1.2
-1.6
-0.8
COMMON EMITTER
Ta=25 C
I =0mA
B
COMMON EMITTER
V =-5V
CE
Ta=100 CTa=25 C Ta=0 C
-100
-30
-300
-1K -2K
COMMON EMITTER
Ta=25 C
V =-2V
CE
VOLTAGE V (V)
-5
-30
-1K
-3K
-0.05
- 0.1
- 0.3
-0.5
-1.0
COMMON EMITTER
Ta=25 C
I /I =10
C
B
B
C
I /I =5
-1
-2
-3
-5
-12
-30
-80
-140
-250
100
5
10
30
50
300
500
V =-5V
CE
V =-10V
CE
COMMON EMITTER
-3
5
10
30
100
50
-10
-100
-30
-300
300
500
Tc=25 C
-1K -2K
V =-5V
V =-10V
CE
CE
Ta=100 C
Ta=25 C
Ta=0 C
COLLECTOR CURRENT I (mA)
COMMON EMITTER
VOLTAGE V (V)
COLLECTOR-EMITTER SATURATION
-5 -10
CE(sat)
I /I =10
Ta=100 C
-300
-100
-30
C
-1K
-3K
V - I
CE(sat)
C
-0.1
-0.05
-0.3
-0.5
-1.0
-3.0
-5.0
25
0
C B
-0.4
-0.6
-0.8
-1.0
-1.2
-1.4
-200
-400
-600
-800
-1K
-1.2K
-1.4K
-1.6K
2002. 7. 16
3/3
Revision No : 1
KTA1659/A
C - V
CB
COLLECTOR-BASE VOLTAGE V (V)
ob
1
COLLECTOR OUTPUT CAPACITANCE
ob
CB
C (pF)
3
5
10
30
50
100
I =0
f=1MHz
Tc=25 C
E
-0.5 -1
-3 -5 -10
-30 -50 -100 -200
f - I
C
COLLECTOR CURRENT I (mA)
T
TRANSITION FREQUENCY f (MHz)
T
C
10
30
50
100
300
500
COMMON EMITTER
Tc=25 C
V =-2V
CE
-2
-5 -10
-30 -50 -100
-300 -500
V
=-5V
CE
SAFE OPERATING AREA
CE
COLLECTOR-EMITTER VOLTAGE V (V)
-3
-5
-10
-30
-0.01
C
COLLECTOR CURRENT I (A)
I MAX(PULSED)
C
*
C
I MAX
V MAX.
CEO
-100
-300
-50
-0.03
-0.05
-0.1
-0.3
-0.5
-1
-3
-5
SINGLE
NONREPETITIVE
PULSE Tc=25 C
CURVES MUST BE
DERATED LINEARLY WITH
INCREASE IN TEMPERATURE
*
(CONTINUOUS)
DC OPERATION
*
500ms
100ms
*
10ms
* *
1ms
THERMA
L
LIMITED
S/B LIM
ITED
V MAX=-160V
KTA1659
CEO
V MAX=-180V
KTA1659A
CEO
AMBIENT TEMPERATURE Ta ( C)
COLLECTOR POWER DISSIPATION P (W)
0
0
Pc - Ta
20
40
60
80
100
5
10
15
20
140
120
160
C
25
Tc=Ta
INFINITE HEAT SINK
NO HEAT SINK
1
1
2
2